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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2755AGR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2755AGR is Dual N-channel MOS Field Effect
PACKAGE DRAWING (Unit: mm)
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
8
5
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
? Dual chip type
? Low on-state resistance
1
5.37 MAX.
4
6.0 ±0.3
4.4
0.8
R DS(on)1 = 18 m Ω MAX. (V GS = 10 V, I D = 4.0 A)
R DS(on)2 = 29 m Ω MAX. (V GS = 4.5 V, I D = 4.0 A)
? Low input capacitance
1.27 0.78 MAX.
0.5 ±0.2
0.10
C iss = 650 pF TYP.
0.40
+0.10
–0.05
0.12 M
? Built-in G-S protection diode
? Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C, All terminals are connected.)
Drain to Source Voltage (V GS = 0 V)
V DSS
30
V
Drain Current (pulse)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
Note1
V GSS
I D(DC)
I D(pulse)
± 20
± 8.0
± 32
V
A
A
EQUIVALENT CIRCUIT
(1/2 circuit)
Total Power Dissipation (1 unit)
Note2
P T
1.7
W
Drain
Total Power Dissipation (2 units)
Note2
P T
2.0
W
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
T ch
T stg
I AS
150
? 55 to +150
8
° C
° C
A
Gate
Body
Diode
Single Avalanche Energy
Note3
E AS
6.4
mJ
Gate
Protection
Diode
Source
2. Mounted on ceramic substrate of 2000 mm x 2.2 mm
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2
3. Starting T ch = 25 ° C, V DD = 15 V, R G = 25 Ω , V GS = 20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19282EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008
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